Electronics Weekly

X-Fab adds 375V nmos and pmos super-junction transistors to BCD chip process

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
EDN

Models for high-voltage transistors in a standard CMOS process

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...
Electronic Design

Dirt Cheap ASIC Design for Dummies (Part 3): NMOS, PMOS Silicon Design Using a Web Browser

Quickly learn what the difference is between PMOS and NMOS transistors in their structure and operation, and how CMOS works with the two in combination. Siliwiz, a free, browser-based, ASIC layout ...
EDN

Power dissipation in portables: Design considerations using low-power CMOS ICs

When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...
Semiconductor Engineering

Mobility Gets A Boost With Expanded Epi Applications

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
Semiconductor Engineering

Speeding Up NMOS

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
Electronic Design

Use Hybrid PMOS-NMOS Active Loads To Cut Substrate Noise In Differential Amplifiers

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
Science Daily

Purdue Engineers Create Model For Testing Transistor Reliability

Researchers at Purdue University have created a "unified model" for predicting the reliability of new designs for silicon transistors – a potential tool that industry could use to save tens of ...
Electronics Weekly

X-Fab adds 375V nmos and pmos super-junction transistors to BCD chip process

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...